Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs

Wenqi Zhang, Tzuo-Li Wang, Yan-hua Huang, Tsu-Ting Cheng, Shih-Yao Chen, Yi-Ying Li, Chun-Hsiang Hsu, Chih-Jui Lai, Wen-Kuan Yeh, Yi-lin Yang. Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs. Microelectronics Reliability, 67:89-93, 2016. [doi]

@article{ZhangWHCCLHLYY16,
  title = {Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs},
  author = {Wenqi Zhang and Tzuo-Li Wang and Yan-hua Huang and Tsu-Ting Cheng and Shih-Yao Chen and Yi-Ying Li and Chun-Hsiang Hsu and Chih-Jui Lai and Wen-Kuan Yeh and Yi-lin Yang},
  year = {2016},
  doi = {10.1016/j.microrel.2016.10.015},
  url = {http://dx.doi.org/10.1016/j.microrel.2016.10.015},
  researchr = {https://researchr.org/publication/ZhangWHCCLHLYY16},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {67},
  pages = {89-93},
}