Highly Reliable 40nm Embedded Dual-Interface-Switching RRAM Technology for Display Driver IC Applications

L. Zhao, Z. Chen, D. Manea, S. Li, J. Li, Y. Zhu, Z. Sui, Z. Lu. Highly Reliable 40nm Embedded Dual-Interface-Switching RRAM Technology for Display Driver IC Applications. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 316-317, IEEE, 2022. [doi]

@inproceedings{ZhaoCMLLZSL22,
  title = {Highly Reliable 40nm Embedded Dual-Interface-Switching RRAM Technology for Display Driver IC Applications},
  author = {L. Zhao and Z. Chen and D. Manea and S. Li and J. Li and Y. Zhu and Z. Sui and Z. Lu},
  year = {2022},
  doi = {10.1109/VLSITechnologyandCir46769.2022.9830289},
  url = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830289},
  researchr = {https://researchr.org/publication/ZhaoCMLLZSL22},
  cites = {0},
  citedby = {0},
  pages = {316-317},
  booktitle = {IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-9772-5},
}