Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology

Yunlong Zheng, Ruofan Dai, Zhuojun Chen, Shulong Sun, Zheng Wang, Zehua Sang, Min Lin, Shichang Zou. Comparison of single-event transients of T-gate core and IO device in 130 nm partially depleted silicon-on-insulator technology. IEICE Electronic Express, 13(12):20160424, 2016. [doi]

Abstract

Abstract is missing.