Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells - researchr publication

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Zhongshan Zheng, Zhentao Li, Bo Li 0051, Jiajun Luo, Zhengsheng Han. Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells. In 13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, October 29 - November 1, 2019. pages 1-3, IEEE, 2019. [doi]

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