Zhengsheng Han - researchr alias

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Viewing Publication 1 - 15 from 15

2023

2022

A snapback-free RC-LIGBT with separated LIGBT and FWDXuwei Lin, Weizhong Chen, Haifeng Qin, Hongsheng Zhang, Zhengsheng Han. ieiceee, 19(17):20220300, 2022. [doi]

2019

2 layerWeizhong Chen, Yao Huang, Shun Li, Lingli Wang, Lijun He, Yi Huang 0011, Zhengsheng Han. ieiceee, 16(19):20190445, 2019. [doi]

A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal RegionWeizhong Chen, Yao Huang, Shun Li, Yi Huang, Zhengsheng Han. access, 7:183589-183595, 2019. [doi]

Snapback-free base resistance controlled thyristor with floating N-regionFei Hu, LiMei Song, Zhengsheng Han, Jiajun Luo. ieiceee, 16(21):20190592, 2019. [doi]

A new snapback-free base resistance controlled thyristor with semi-superjunctionFei Hu, LiMei Song, Zhengsheng Han, Huan Du, Jiajun Luo. ieiceee, 16(8):20190104, 2019. [doi]

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage TechniqueYangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Duoli Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han. access, 7:115989-115996, 2019. [doi]

Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cellsZhongshan Zheng, Zhentao Li, Bo Li 0051, Jiajun Luo, Zhengsheng Han. asicon 2019: 1-3 [doi]

2018

2017

2011

A new full current mode sense amplifier with compensation circuitYiqi Wang, Fazhao Zhao, Mengxin Liu, Zhengsheng Han. asicon 2011: 645-648 [doi]

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