Deep-level defects study of arsenic-implanted ZnO single crystal

C. Y. Zhu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa. Deep-level defects study of arsenic-implanted ZnO single crystal. Microelectronics Journal, 40(2):286-288, 2009. [doi]

@article{ZhuLBAS09,
  title = {Deep-level defects study of arsenic-implanted ZnO single crystal},
  author = {C. Y. Zhu and C. C. Ling and G. Brauer and W. Anwand and W. Skorupa},
  year = {2009},
  doi = {10.1016/j.mejo.2008.07.037},
  url = {http://dx.doi.org/10.1016/j.mejo.2008.07.037},
  tags = {C++},
  researchr = {https://researchr.org/publication/ZhuLBAS09},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {40},
  number = {2},
  pages = {286-288},
}