Martin Lemberger - researchr alias

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Viewing Publication 1 - 6 from 6

2007

Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursorsMartin Lemberger, A. Baunemann, Anton J. Bauer. mr, 47(4-5):635-639, 2007. [doi]

Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layersAlbena Paskaleva, Martin Lemberger, Anton J. Bauer. mr, 47(12):2094-2099, 2007. [doi]

2005

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursorMartin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel. mr, 45(5-6):819-822, 2005. [doi]

Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k Hf::x::Ti::y::Si::z::O filmsAlbena Paskaleva, Anton J. Bauer, Martin Lemberger. mr, 45(7-8):1124-1133, 2005. [doi]

2003

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursorsAlbena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel. mr, 43(8):1253-1257, 2003. [doi]

2001

Electrical reliability aspects of through the gate implanted MOS structures with thin oxidesM. P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel. mr, 41(7):987-990, 2001. [doi]

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