Heiner Ryssel - researchr alias

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Viewing Publication 1 - 11 from 11

2013

Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiCZ. Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey. mr, 53(12):1841-1847, 2013. [doi]

2011

Investigation of the reliability of 4H-SiC MOS devices for high temperature applicationsMartin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel. mr, 51(8):1346-1350, 2011. [doi]

2007

Quantitative oxide charge determination by photocurrent analysisM. Rommel, Anton J. Bauer, Heiner Ryssel. mr, 47(4-5):673-677, 2007. [doi]

2005

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursorMartin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel. mr, 45(5-6):819-822, 2005. [doi]

2003

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursorsAlbena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel. mr, 43(8):1253-1257, 2003. [doi]

2001

1998

Monte Carlo simulation of silicon amorphization during ion implantationWalter Bohmayr, Alexander Burenkov, Jürgen Lorenz, Heiner Ryssel, Siegfried Selberherr. tcad, 17(12):1236-1243, 1998. [doi]

1990

Simulation of silicon semiconductor processingPeter Pichler, Heiner Ryssel. ett, 1(3):293-299, 1990. [doi]

1985

COMPOSITE -- A Complete Modeling Program of Silicon TechnologyJürgen Lorenz, Joachim Pelka, Heiner Ryssel, Albert Sachs, Albert Seidl, Milos Svoboda. tcad, 4(4):421-430, 1985. [doi]

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