Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC

Z. Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey. Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. Microelectronics Reliability, 53(12):1841-1847, 2013. [doi]

Abstract

Abstract is missing.