Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC

Z. Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey. Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. Microelectronics Reliability, 53(12):1841-1847, 2013. [doi]

Authors

Z. Ouennoughi

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C. Strenger

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F. Bourouba

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V. Haeublein

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Heiner Ryssel

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Lothar Frey

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