Z. Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey. Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. Microelectronics Reliability, 53(12):1841-1847, 2013. [doi]
@article{OuennoughiSBHRF13,
title = {Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC},
author = {Z. Ouennoughi and C. Strenger and F. Bourouba and V. Haeublein and Heiner Ryssel and Lothar Frey},
year = {2013},
doi = {10.1016/j.microrel.2013.06.009},
url = {http://dx.doi.org/10.1016/j.microrel.2013.06.009},
researchr = {https://researchr.org/publication/OuennoughiSBHRF13},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {53},
number = {12},
pages = {1841-1847},
}