The following publications are possibly variants of this publication:
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- High brightness GaN LEDs degradation during dc and pulsed stressM. Meneghini, Simona Podda, A. Morelli, Ruggero Pintus, L. Trevisanello, Gaudenzio Meneghesso, Massimo Vanzi, Enrico Zanoni. mr, 46(9-11):1720-1724, 2006. [doi]
- Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stressValerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, Alessandro Chini. mr, 50(9-11):1523-1527, 2010. [doi]