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Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing

Sang-Myeon Han, Min Cheol Lee, Moon-Young Shin, Joong-Hyun Park, Min-Koo Han. Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing. Proceedings of the IEEE, 93(7):1297-1305, 2005. [doi]

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Sang-Myeon Han

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Min Cheol Lee

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Moon-Young Shin

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Joong-Hyun Park

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Min-Koo Han

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