Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing

Sang-Myeon Han, Min Cheol Lee, Moon-Young Shin, Joong-Hyun Park, Min-Koo Han. Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing. Proceedings of the IEEE, 93(7):1297-1305, 2005. [doi]

Abstract

Abstract is missing.