Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing

Sang-Myeon Han, Min Cheol Lee, Moon-Young Shin, Joong-Hyun Park, Min-Koo Han. Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing. Proceedings of the IEEE, 93(7):1297-1305, 2005. [doi]

@article{HanLSPH05,
  title = {Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing},
  author = {Sang-Myeon Han and Min Cheol Lee and Moon-Young Shin and Joong-Hyun Park and Min-Koo Han},
  year = {2005},
  doi = {10.1109/JPROC.2005.851535},
  url = {https://doi.org/10.1109/JPROC.2005.851535},
  researchr = {https://researchr.org/publication/HanLSPH05},
  cites = {0},
  citedby = {0},
  journal = {Proceedings of the IEEE},
  volume = {93},
  number = {7},
  pages = {1297-1305},
}