Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory

Menghua Jia, Yachen Kong, Xuepeng Zhan, Meng Zhang 0014, Fei Wu 0005, Jiezhi Chen. Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory. IEEE Trans. on CAD of Integrated Circuits and Systems, 41(11):4797-4807, 2022. [doi]

@article{JiaKZZWC22,
  title = {Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory},
  author = {Menghua Jia and Yachen Kong and Xuepeng Zhan and Meng Zhang 0014 and Fei Wu 0005 and Jiezhi Chen},
  year = {2022},
  doi = {10.1109/TCAD.2021.3134900},
  url = {https://doi.org/10.1109/TCAD.2021.3134900},
  researchr = {https://researchr.org/publication/JiaKZZWC22},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. on CAD of Integrated Circuits and Systems},
  volume = {41},
  number = {11},
  pages = {4797-4807},
}