A 0.8V V_MIN Ultra-Low Leakage High Density 6T SRAM in 40nm CMOS Technology Using Repeated-Pulse Wordline Suppression Scheme - researchr publication

researchr

You are not signed in
Sign in
Sign up

Ashish Kumar, Mohammad Aftab Alam, Gangaikondan S. Visweswaran. A 0.8V V_MIN Ultra-Low Leakage High Density 6T SRAM in 40nm CMOS Technology Using Repeated-Pulse Wordline Suppression Scheme. In 32nd International Conference on VLSI Design and 2019 18th International Conference on Embedded Systems, VLSID 2019, Delhi, India, January 5-9, 2019. pages 547-548, IEEE, 2019. [doi]

Abstract is missing.

runs on WebDSL