A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits

Dong Uk Lee, Kyung-whan Kim, Kwan-Weon Kim, Kang Seol Lee, Sang Jin Byeon, Jae-Hwan Kim, Jin-Hee Cho, Jaejin Lee, Jun Hyun Chun. A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits. J. Solid-State Circuits, 50(1):191-203, 2015. [doi]

Abstract

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