The following publications are possibly variants of this publication:
- Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technologyLei Song, Zhiyuan Hu, Mengying Zhang, Xiaonian Liu, Lihua Dai, Zhengxuan Zhang, Shichang Zou. mr, 74:1-8, 2017. [doi]
- Total-ionization-dose characterization of a radiation-hardened mixed-signal microcontroller SoC in 180 nm CMOS technology for nanosatellitesX. Ge, Wen Gao 0001, Feng Xu, Chen Zhao, Yang Zhao, X. Li, D. Jiang, H. Liu, Y. Li, G. Sun. mj, 87:65-72, 2019. [doi]
- The total ionizing dose response of leading-edge FDSOI MOSFETsJian Wang, Binhong Li, Yang Huang, Kai Zhao, Fang Yu, Qiwen Zheng, Qi Guo, Liewei Xu, J. Gao, X. Cai, Y. Cui. mr, 88:979-983, 2018. [doi]