The following publications are possibly variants of this publication:
- A 0.5-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Burn-In for Stability ReinforcementKunyang Liu, Xinpeng Chen, Hongliang Pu, Hirofumi Shinohara. jssc, 56(7):2193-2204, 2021. [doi]
- 36.3 A Modeling Attack Resilient Strong PUF with Feedback-SPN Structure Having <0.73% Bit Error Rate Through In-Cell Hot-Carrier Injection Burn-InKunyang Liu, Zihan Fu, Gen Li, Hongliang Pu, Zhibo Guan, Xingyu Wang, Xinpeng Chen, Hirofumi Shinohara. isscc 2021: 502-504 [doi]
- 2 2D Power-Gated EE SRAM Physically Unclonable Function With Dark-Bit Detection TechniqueKunyang Liu, Yue Min, Xuan Yang, Hanfeng Sun, Hirofumi Shinohara. asscc 2018: 161-164 [doi]
- 2 0.21%-Native-BER EE SRAM Physically Unclonable Function With 2-D Power-Gated Bit Cells and ${V}_{\text{SS}}$ Bias-Based Dark-Bit DetectionKunyang Liu, Yue Min, Xuan Yang, Hanfeng Sun, Hirofumi Shinohara. jssc, 55(6):1719-1732, 2020. [doi]
- A Reconfigurable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source With -6 Native Bit Error RateYachun Pang, Bin Gao, Dong Wu, Shengyu Yi, Qi Liu, Wei-Hao Chen, Ting-Wei Chang, Wei-En Lin, Xiaoyu Sun, Shimeng Yu, He Qian, Meng-Fan Chang, Huaqiang Wu. isscc 2019: 402-404 [doi]