SPICE modelling of hot-carrier degradation in Si::1-::::x::Ge::x:: S/D and HfSiON based pMOS transistors

J. Martín-Martínez, E. Amat, M. B. Gonzalez, P. Verheyen, R. Rodríguez, M. Nafría, X. Aymerich, E. Simoen. SPICE modelling of hot-carrier degradation in Si::1-::::x::Ge::x:: S/D and HfSiON based pMOS transistors. Microelectronics Reliability, 50(9-11):1263-1266, 2010. [doi]

@article{Martin-MartinezAGVRNAS10,
  title = {SPICE modelling of hot-carrier degradation in Si::1-::::x::Ge::x:: S/D and HfSiON based pMOS transistors},
  author = {J. Martín-Martínez and E. Amat and M. B. Gonzalez and P. Verheyen and R. Rodríguez and M. Nafría and X. Aymerich and E. Simoen},
  year = {2010},
  doi = {10.1016/j.microrel.2010.07.150},
  url = {http://dx.doi.org/10.1016/j.microrel.2010.07.150},
  tags = {rule-based, e-science},
  researchr = {https://researchr.org/publication/Martin-MartinezAGVRNAS10},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {50},
  number = {9-11},
  pages = {1263-1266},
}