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Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror

J. Martín-Martínez, R. Rodríguez, M. Nafría, X. Aymerich, James H. Stathis. Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectronics Reliability, 47(4-5):665-668, 2007. [doi]

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J. Martín-Martínez

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R. Rodríguez

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M. Nafría

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X. Aymerich

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James H. Stathis

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