J. Martín-Martínez, R. Rodríguez, M. Nafría, X. Aymerich, James H. Stathis. Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectronics Reliability, 47(4-5):665-668, 2007. [doi]
@article{Martin-MartinezRNAS07,
title = {Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror},
author = {J. Martín-Martínez and R. Rodríguez and M. Nafría and X. Aymerich and James H. Stathis},
year = {2007},
doi = {10.1016/j.microrel.2007.01.035},
url = {http://dx.doi.org/10.1016/j.microrel.2007.01.035},
researchr = {https://researchr.org/publication/Martin-MartinezRNAS07},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {47},
number = {4-5},
pages = {665-668},
}