Statistical VTH shift variation self-convergence scheme using near threshold VWL injection for local electron injected asymmetric pass gate transistor SRAM

Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi. Statistical VTH shift variation self-convergence scheme using near threshold VWL injection for local electron injected asymmetric pass gate transistor SRAM. In Rakesh Patel, Tom Andre, Aurangzeb Khan, editors, 2011 IEEE Custom Integrated Circuits Conference, CICC 2011, San Jose, CA, USA, Sept. 19-21, 2011. pages 1-4, IEEE, 2011. [doi]

Abstract

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