Statistical VTH shift variation self-convergence scheme using near threshold VWL injection for local electron injected asymmetric pass gate transistor SRAM - researchr publication related

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Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi. Statistical VTH shift variation self-convergence scheme using near threshold VWL injection for local electron injected asymmetric pass gate transistor SRAM. In Rakesh Patel, Tom Andre, Aurangzeb Khan, editors, 2011 IEEE Custom Integrated Circuits Conference, CICC 2011, San Jose, CA, USA, Sept. 19-21, 2011. pages 1-4, IEEE, 2011. [doi]

The following publications are possibly variants of this publication:

Near Threshold Voltage Word-Line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAMKousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi. tcas, 59-I(8):1635-1643, 2012. [doi]

TH Mismatch Self-Repair in 6T-SRAM With Asymmetric Pass Gate Transistor Formed by Post-Process Local Electron InjectionKousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Shinji Miyano, Ken Takeuchi. jssc, 46(9):2180-2188, 2011. [doi]

Elimination of half select disturb in 8T-SRAM by local injected electron asymmetric pass gate transistorKentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi. cicc 2010: 1-4 [doi]

Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate TransistorKousuke Miyaji, Kentaro Honda, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi. ieicet, 95-C(4):564-571, 2012. [doi]

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