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Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf. Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling. In 35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, 14-18 September 2009. pages 76-83, IEEE, 2009. [doi]

Authors

Sokrates T. Pantelides

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L. Tsetseris

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M. J. Beck

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S. N. Rashkeev

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G. Hadjisavvas

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I. G. Batyrev

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B. R. Tuttle

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A. G. Marinopoulos

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X. J. Zhou

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Daniel M. Fleetwood

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Ronald D. Schrimpf

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