Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf. Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling. In 35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, 14-18 September 2009. pages 76-83, IEEE, 2009. [doi]

@inproceedings{PantelidesTBRHB09,
  title = {Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling},
  author = {Sokrates T. Pantelides and L. Tsetseris and M. J. Beck and S. N. Rashkeev and G. Hadjisavvas and I. G. Batyrev and B. R. Tuttle and A. G. Marinopoulos and X. J. Zhou and Daniel M. Fleetwood and Ronald D. Schrimpf},
  year = {2009},
  doi = {10.1109/ESSCIRC.2009.5325931},
  url = {https://doi.org/10.1109/ESSCIRC.2009.5325931},
  researchr = {https://researchr.org/publication/PantelidesTBRHB09},
  cites = {0},
  citedby = {0},
  pages = {76-83},
  booktitle = {35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, 14-18 September 2009},
  publisher = {IEEE},
  isbn = {978-1-4244-4354-3},
}