Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability

Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar. Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]

Authors

Taras Ravsher

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Shamin H. Sharifi

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Andrea Fantini

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Hubert Hody

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Thomas Witters

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Daniele Garbin

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Robin Degraeve

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Valeri Afanas'ev

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Jan Van Houdt

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Ludovic Goux

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D. Crotti

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Gouri Sankar Kar

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