Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar. Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]
@inproceedings{RavsherSFHWGDAH21,
title = {Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability},
author = {Taras Ravsher and Shamin H. Sharifi and Andrea Fantini and Hubert Hody and Thomas Witters and Daniele Garbin and Robin Degraeve and Valeri Afanas'ev and Jan Van Houdt and Ludovic Goux and D. Crotti and Gouri Sankar Kar},
year = {2021},
doi = {10.1109/IMW51353.2021.9439629},
url = {https://doi.org/10.1109/IMW51353.2021.9439629},
researchr = {https://researchr.org/publication/RavsherSFHWGDAH21},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021},
publisher = {IEEE},
isbn = {978-1-7281-8517-0},
}