The following publications are possibly variants of this publication:
- Electrical characteristics of MOSFETs with La::2::O::3::/Y::2::O::3:: gate stackParhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai. mr, 48(11-12):1769-1771, 2008. [doi]
- Degradation of high-K LA::2::O::3:: gate dielectrics using progressive electrical stressE. Miranda, J. Molina, Y. Kim, H. Iwai. mr, 45(9-11):1365-1369, 2005. [doi]