Jae-Yoon Sim, Kee-Won Kwon, Ki Chul Chun. Charge-transferred presensing, negatively precharged word-line, and temperature-insensitive power-up schemes for low-voltage DRAMs. J. Solid-State Circuits, 39(4):694-703, 2004. [doi]
@article{SimKC04-0,
title = {Charge-transferred presensing, negatively precharged word-line, and temperature-insensitive power-up schemes for low-voltage DRAMs},
author = {Jae-Yoon Sim and Kee-Won Kwon and Ki Chul Chun},
year = {2004},
doi = {10.1109/JSSC.2004.825224},
url = {https://doi.org/10.1109/JSSC.2004.825224},
researchr = {https://researchr.org/publication/SimKC04-0},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {39},
number = {4},
pages = {694-703},
}