Charge-transferred presensing, negatively precharged word-line, and temperature-insensitive power-up schemes for low-voltage DRAMs

Jae-Yoon Sim, Kee-Won Kwon, Ki Chul Chun. Charge-transferred presensing, negatively precharged word-line, and temperature-insensitive power-up schemes for low-voltage DRAMs. J. Solid-State Circuits, 39(4):694-703, 2004. [doi]

Abstract

Abstract is missing.