Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni. Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electronic Express, 3(13):310-315, 2006. [doi]

@article{SuemitsuFTRMZ06,
  title = {Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate},
  author = {Tetsuya Suemitsu and Yoshino K. Fukai and Masami Tokumitsu and Fabiana Rampazzo and Gaudenzio Meneghesso and Enrico Zanoni},
  year = {2006},
  doi = {10.1587/elex.3.310},
  url = {http://dx.doi.org/10.1587/elex.3.310},
  researchr = {https://researchr.org/publication/SuemitsuFTRMZ06},
  cites = {0},
  citedby = {0},
  journal = {IEICE Electronic Express},
  volume = {3},
  number = {13},
  pages = {310-315},
}