Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate - researchr publication related

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Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni. Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electronic Express, 3(13):310-315, 2006. [doi]

The following publications are possibly variants of this publication:

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gateGaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni. mr, 58:151-157, 2016. [doi]

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