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Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate

Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni. Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate. IEICE Electronic Express, 3(13):310-315, 2006. [doi]

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