Tsugio Takahashi, Tomonori Sekiguchi, Riichiro Takemura, Seiji Narui, Hiroki Fujisawa, Shinichi Miyatake, Makoto Morino, Koji Arai, Satoru Yamada, Shoji Shukuri, Masayuki Nakamura, Yoshitaka Tadaki, Kazuhiko Kajigaya, Katsutaka Kimura, Kiyoo Itoh. A multigigabit DRAM technology with 6F/sup 2/ open-bitline cell, distributed overdriven sensing, and stacked-flash fuse. J. Solid-State Circuits, 36(11):1721-1727, 2001. [doi]
Abstract is missing.