A 40-nm 256-Kb Half-Select Resilient 8T SRAM with Sequential Writing Technique - researchr publication authors

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Shusuke Yoshimoto, Masaharu Terada, Shunsuke Okumura, Toshikazu Suzuki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto. A 40-nm 256-Kb Half-Select Resilient 8T SRAM with Sequential Writing Technique. IEICE Electronic Express, 9(12):1023-1029, 2012. [doi]

This author has not been identified. Look up 'Shusuke Yoshimoto' in GoogleThis author has not been identified. Look up 'Masaharu Terada' in GoogleThis author has not been identified. Look up 'Shunsuke Okumura' in GoogleThis author has not been identified. Look up 'Toshikazu Suzuki' in GoogleThis author has not been identified. Look up 'Shinji Miyano' in GoogleThis author has not been identified. Look up 'Hiroshi Kawaguchi' in GoogleThis author has not been identified. Look up 'Masahiko Yoshimoto' in Google

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