NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan. NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

This author has not been identified. Look up 'Huimei Zhou' in GoogleThis author has not been identified. Look up 'Miaomiao Wang' in GoogleThis author has not been identified. Look up 'Jingyun Zhang' in GoogleThis author has not been identified. Look up 'Koji Watanabe' in GoogleThis author has not been identified. Look up 'Curtis Durfee' in GoogleThis author has not been identified. Look up 'Shogo Mochizuki' in GoogleThis author has not been identified. Look up 'Ruqiang Bao' in GoogleThis author has not been identified. Look up 'Richard G. Southwick' in GoogleThis author has not been identified. Look up 'Maruf Bhuiyan' in GoogleThis author has not been identified. Look up 'Basker Veeraraghavan' in Google

runs on WebDSL