Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan. NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]
@inproceedings{ZhouWZWDMBSBV20,
title = {NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor},
author = {Huimei Zhou and Miaomiao Wang and Jingyun Zhang and Koji Watanabe and Curtis Durfee and Shogo Mochizuki and Ruqiang Bao and Richard G. Southwick and Maruf Bhuiyan and Basker Veeraraghavan},
year = {2020},
doi = {10.1109/IRPS45951.2020.9129023},
url = {https://doi.org/10.1109/IRPS45951.2020.9129023},
researchr = {https://researchr.org/publication/ZhouWZWDMBSBV20},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
publisher = {IEEE},
isbn = {978-1-7281-3199-3},
}