Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation - researchr publication related

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Ying-Yu Chen. Graphene nano-ribbon and transition metal dichalcogenide field-effect transistor modeling and circuit simulation. PhD thesis, University of Illinois Urbana-Champaign, USA, 2015. [doi]

The following publications are possibly variants of this publication:

A SPICE model of flexible transition metal dichalcogenide field-effect transistorsYing-Yu Chen, Zelei Sun, Deming Chen. dac 2015: 140 [doi]

Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scalingYing-Yu Chen, Morteza Gholipour, Deming Chen. aspdac 2016: 761-768 [doi]

Schottky-barrier-type Graphene Nano-Ribbon Field-Effect Transistors: A study on compact modeling, process variation, and circuit performanceYing-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen. NANOARCH 2013: 82-88 [doi]

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