Won-Ju Cho - researchr alias

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Viewing Publication 1 - 17 from 17

2024

Smart pH Sensing: A Self-Sensitivity Programmable Platform with Multi-Functional Charge-Trap-Flash ISFET TechnologyYeong-Ung Kim, Won-Ju Cho. sensors, 24(3):1017, February 2024. [doi]

2023

Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect TransistorsTae-Hwan Hyun, Won-Ju Cho. sensors, 23(15):6720, August 2023. [doi]

2021

Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect TransistorSeong-Kun Cho, Won-Ju Cho. sensors, 21(11):4213, 2021. [doi]

Highly Sensitive and Transparent Urea-EnFET Based Point-of-Care Diagnostic Test Sensor with a Triple-Gate a-IGZO TFTSeong-Kun Cho, Won-Ju Cho. sensors, 21(14):4748, 2021. [doi]

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching MemoriesHyeong-Un Jeon, Won-Ju Cho. sensors, 21(13):4435, 2021. [doi]

2018

Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budgetEun-Ki Hong, Won-Ju Cho. mr, 80:306-311, 2018. [doi]

Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistorsHee Pyung Park, Sang-Woo Kim, Joong-Won Shin, Won-Ju Cho, Jong-Tae Park. mr, 88:873-877, 2018. [doi]

2017

Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistorsHyun Jong Kim, Byung Sang Song, Won-Ju Cho, Jong-Tae Park. mr, 76:333-337, 2017. [doi]

Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layerSang-Min Kim, Min-Soo Kang, Won-Ju Cho, Jong-Tae Park. mr, 76:327-332, 2017. [doi]

2016

Device instability of amorphous InGaZnO thin film transistors with transparent source and drainSang-Min Kim, Min-Ju Ahn, Won-Ju Cho, Jong-Tae Park. mr, 64:575-579, 2016. [doi]

Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drainJong-Hoon Lee, Seul Ki Yu, Jae-Won Kim, Min-Ju Ahn, Won-Ju Cho, Jong-Tae Park. mr, 64:580-584, 2016. [doi]

2012

Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectricsSeul Ki Lee, Sung Il Hong, Yeon-Ho Lee, Se-Won Lee, Won-Ju Cho, Jong-Tae Park. mr, 52(9-10):2504-2507, 2012. [doi]

Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETsSeung Min Lee, Chong-Gun Yu, Seung Min Jeong, Won-Ju Cho, Jong-Tae Park. mr, 52(9-10):1945-1948, 2012. [doi]

2010

NBTI and hot carrier effect of Schottky-barrier p-MOSFETsJin Young Kim, Jun-Seok Oh, Won-Ju Cho, Jong-Tae Park. mr, 50(9-11):1290-1293, 2010. [doi]

2009

NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI waferYong-Woo Jeon, Dae Hyun Ka, Chong-Gun Yu, Won-Ju Cho, M. Saif Islam, Jong-Tae Park. mr, 49(9-11):994-997, 2009. [doi]

2008

Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In::2::O::3:: Nano-Particles Embedded in Polyimide InsulatorDong Uk Lee, Seon Pil Kim, Tae Hee Lee, Eun Kyu Kim, Hyun-Mo Koo, Won-Ju Cho, Young-Ho Kim. ieicet, 91-C(5):747-750, 2008. [doi]

2007

Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETsSung Jun Jang, Dae Hyun Ka, Chong-Gun Yu, Kwan-Su Kim, Won-Ju Cho, Jong-Tae Park. mr, 47(9-11):1411-1415, 2007. [doi]

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