Journal: IEEE Design & Test of Computers

Volume 28, Issue 1

6 -- 8Chris H. Kim, Leland Chang. Guest editors introduction: Nanoscale Memories Pose Unique Challenges
10 -- 13Kiyoo Itoh. Embedded Memories: Progress and a Look into the Future
14 -- 21Darren Anand, Kevin Gorman, Mark Jacunski, Adrian Paparelli. Embedded DRAM in 45-nm Technology and Beyond
22 -- 31Fatih Hamzaoglu, Yih Wang, Pramod Kolar, Liqiong Wei, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang. Bit Cell Optimizations and Circuit Techniques for Nanoscale SRAM Design
32 -- 43Masood Qazi, Mahmut Sinangil, Anantha Chandrakasan. Challenges and Directions for Low-Voltage SRAM
44 -- 51Yuan Xie. Modeling, Architecture, and Applications for Emerging Memory Technologies
52 -- 63Takayuki Kawahara. Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing
64 -- 71Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Meng-Fan Chang, Pei-Chia Chiang, Wen-Pin Lin, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Frederick T. Chen, Ming-Jinn Tsai. Fast-Write Resistive RAM (RRAM) for Embedded Applications
76 -- 77Andrew B. Kahng. Design for manufacturability: Then and now
78 -- 79Igor L. Markov. EDA: Synergy or sum of the parts? [review of Electronic Design Automation: Synthesis, Verification and Test (Systems on Silicon (Wang, L.-T., Eds., et al; 2009)]