370 | -- | 370 | T. S. Kuan. Preface |
371 | -- | 382 | James G. Ryan, Robert M. Geffken, Neil R. Poulin, Jurij R. Paraszczak. The evolution of interconnection technology at IBM |
383 | -- | 402 | Daniel C. Edelstein, George A. Sai-Halasz, Yuh-Jier Mii. VLSI on-chip interconnection performance simulations and measurements |
403 | -- | 418 | Randy W. Mann, Larry A. Clevenger, Paul D. Agnello, Francis R. White. Silicides and local interconnections for high-performance VLSI applications |
419 | -- | 436 | Thomas J. Licata, Evan G. Colgan, James M. E. Harper, Stephen E. Luce. Interconnect fabrication processes and the development of low-cost wiring for CMOS products |
437 | -- | 464 | Donna R. Cote, Son Van Nguyen, William J. Cote, Scott L. Pennington, Anthony K. Stamper, Dragan V. Podlesnik. Low-temperature chemical vapor deposition processes and dielectrics for microelectronic circuit manufacturing at IBM |
465 | -- | 498 | Chao-Kun Hu, Kenneth P. Rodbell, Timothy D. Sullivan, Kim Y. Lee, Dennis P. Bouldin. Electromigration and stress-induced voiding in fine Al and Al-alloy thin-film lines |