Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Laurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den bosch, Jan Van Houdt, Maarten Rosmeulen. Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND. In IEEE International Memory Workshop, IMW 2023, Monterey, CA, USA, May 21-24, 2023. pages 1-4, IEEE, 2023. [doi]

This author has not been identified. Look up 'Laurent Breuil' in GoogleThis author has not been identified. Look up 'Mihaela Popovici' in GoogleThis author has not been identified. Look up 'J. Stiers' in GoogleThis author has not been identified. Look up 'Antonio Arreghini' in GoogleThis author has not been identified. It may be one of the following persons:

S. Ramesh

Look up 'S. Ramesh' in GoogleThis author has not been identified. Look up 'G. Van den bosch' in GoogleThis author has not been identified. Look up 'Jan Van Houdt' in GoogleThis author has not been identified. Look up 'Maarten Rosmeulen' in Google

runs on WebDSL