A 1.4 pJ/bit, Power-Scalable 16×12 Gb/s Source-Synchronous I/O With DFE Receiver in 32 nm SOI CMOS Technology - researchr publication authors

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Timothy O. Dickson, Yong Liu, Sergey V. Rylov, Ankur Agrawal, Seongwon Kim, Ping-Hsuan Hsieh, John F. Bulzacchelli, Mark A. Ferriss, Herschel A. Ainspan, Alexander Rylyakov, Benjamin D. Parker, Michael P. Beakes, Christian W. Baks, Lei Shan, Young Hoon Kwark, José A. Tierno, Daniel J. Friedman. A 1.4 pJ/bit, Power-Scalable 16×12 Gb/s Source-Synchronous I/O With DFE Receiver in 32 nm SOI CMOS Technology. J. Solid-State Circuits, 50(8):1917-1931, 2015. [doi]

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