Qing Dong, Zhehong Wang, Jongyup Lim, Yiqun Zhang 0002, Yi-Chun Shih, Yu-Der Chih, Jonathan Chang, David Blaauw, Dennis Sylvester. A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 480-482, IEEE, 2018. [doi]
Abstract is missing.