Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates - researchr publication related

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A. E. Islam, A. Miesle, M. Dietz, Kevin D. Leedy, S. Ganguli, G. Subramanyam, W. Wang, N. Sepelak, D. Dryden, Stephen E. Tetlak, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak. Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates. In Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. pages 1-2, IEEE, 2022. [doi]

The following publications are possibly variants of this publication:

Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealingA. E. Islam, Kevin D. Leedy, Neil A. Moser, S. Ganguli, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak. drc 2021: 1-2 [doi]

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