Toshiaki Kirihata, Sang H. Dhong, Koji Kitamura, Toshio Sunaga, Yasunao Katayama, Roy E. Scheuerlein, Akashi Satoh, Yoshinori Sakaue, Kentaroh Tobimatsu, Koji Hosokawa, Takaki Saitoh, Takefumi Yoshikawa, Hideki Hashimoto, Michiya Kazusawa. A 14-ns 14-Mb CMOS DRAM with 300-mW active power. J. Solid-State Circuits, 27(9):1222-1228, September 1992. [doi]
Abstract is missing.