The following publications are possibly variants of this publication:
- Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?Konrad Seidel, David Lehninger, Franz Müller 0001, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe, Maximilian Lederer. imw2 2023: 1-4 [doi]
- Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory CellsT. Ali, K. Kühnel, M. Czernohorsky, M. Rudolph, B. Pätzold, R. Olivo, D. Lehninger, K. Mertens, F. Müller, M. Lederer, R. Hoffmann, Clemens Mart, M. N. Kalkani, P. Steinke, T. Kämpfe, J. Müller, J. Van Houdt, K. Seidel, L. M. Eng. irps 2020: 1-9 [doi]
- Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memoriesHalid Mulaosmanovic, Patrick D. Lomenzo, Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick, Benjamin Max. irps 2021: 1-6 [doi]
- Embedding hafnium oxide based FeFETs in the memory landscapeStefan Slesazeck, Uwe Schroeder, Thomas Mikolajick. icicdt 2018: 121-124 [doi]
- Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium OxideThomas Mikolajick, Uwe Schroeder, Stefan Slesazeck. drc 2022: 1-2 [doi]
- Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memoriesT. Schenk, S. Mueller, U. Schroeder, R. Materlik, A. Kersch, M. Popovici, C. Adelmann, S. Van Elshocht, T. Mikolajick. essderc 2013: 260-263 [doi]