F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo. On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectronics Reliability, 43(8):1199-1202, 2003. [doi]
@article{MonsieurVHBRSPG03,
title = {On the role of holes in oxide breakdown mechanism in inverted nMOSFETs},
author = {F. Monsieur and E. Vincent and V. Huard and S. Bruyère and D. Roy and Thomas Skotnicki and G. Pananakakis and G. Ghibaudo},
year = {2003},
doi = {10.1016/S0026-2714(03)00172-0},
url = {http://dx.doi.org/10.1016/S0026-2714(03)00172-0},
tags = {e-science},
researchr = {https://researchr.org/publication/MonsieurVHBRSPG03},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {43},
number = {8},
pages = {1199-1202},
}